MOCVD of indium oxide and indium/tin oxide films on substrates

Details MOCVD of indium oxide and indium/tin oxide films on substrates MOCVD of indium oxide and indium/tin oxide films on substrates

1991-01-11

1992-09-15

Lusignan, Michael

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272552, 4272551, 4272481, 427314, 4271263, 427109, 427166, C23C 1618, C23C 1640

Patent

active

051476886

ABSTRACT:
Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.

REFERENCES:
patent: 3854992 (1974-12-01), Kane
patent: 3944684 (1976-03-01), Kane et al.
patent: 3949146 (1976-04-01), Kane
patent: 3949259 (1976-04-01), Kostlin et al.
patent: 4006070 (1977-02-01), King et al.
patent: 4325988 (1982-04-01), Wagner
patent: 4345000 (1982-08-01), Kawazoe et al.
patent: 4419386 (1983-12-01), Gordon
patent: 4568578 (1986-02-01), Arfsten et al.
patent: 4647548 (1987-03-01), Klein
patent: 4720560 (1988-01-01), Hui et al.
patent: 4859499 (1989-08-01), Sauvinet et al.

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