MOCVD of a-axis or b-axis oriented superconducting Bi-Sr-Ca-Cu-O

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505734, 505730, 427 62, 4272553, 4272552, 4272551, 4271263, 427314, 428930, C23C 1600

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active

052545300

ABSTRACT:
A Bi-Sr-Ca-Cu-O-type superconductive film is formed on an MgO (100) single crystal substrate by the chemical vapor deposition method at a film formation speed of 780.degree. C. or less and a film formation speed of 1.0 nm/min or more, and exhibits an a-axis or b-axis preferential growth with respect to the substrate surface.

REFERENCES:
Sugimoto et al., "Metalorganic Chemical vapor deposition of B.sub.i --S.sub.r --C.sub.a --C.sub.u --O ultrathin films", J. Appl. Phys. 70(3) Aug. 1991, pp. 1600-1605.
Endo et al., "Growth and properties of B.sub.i -S.sub.r -C.sub.a -C.sub.u -O superconducting films by MOCVD", Thin Solid Films, 206, Dec. 1991 pp. 125-127.
Natori et al., "Superconducting B.sub.i -S.sub.r -C.sub.a -C.sub.u -O Thin Films Grown by Metalorganic Chemical Vapor deposition at different temperatures", Jpn. J. Appl. Phys. 28(9) Sep. 1989 pp. 1578-1580.
Yamane et al., "Preparation of B.sub.i -S.sub.r -C.sub.a -C.sub.u -O films by chemical vapor deposition with metal chelate and alkoxide"Chemistry letters (1988) pp. 1515-1516.

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