MOCVD method and apparatus

Details MOCVD method and apparatus MOCVD method and apparatus

1991-12-09

1993-02-16

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118725, C23C 1646

Patent

active

051867567

ABSTRACT:
In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16). The slots (22) in the injection plate extend radially and are of non-uniform width so as to compensate for a non-uniform rate of deposition. The resultant flow over a rotating heated substrate (17) gives a more uniform deposit of epitaxially grown material.

REFERENCES:
patent: 3637434 (1972-01-01), Nakanuma et al.
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4499853 (1985-02-01), Miller
patent: 4625678 (1986-12-01), Shioya
"Metalorganic Chemical Vapor Deposition," by P. Dapkus, Annual Review of Material Sciences, 1982, vol. 12, pp. 243-269.
"Metalorganic Chemical Vapor Deposition of III-V Semiconductors," by M. J. Ludowise, Journal of Applied Physics, vol. 58, No. 8, Oct. 15, 1985, pp. 31-55.
"Si Epitaxial Growth of Extremely Uniform Layers by a Controlled Supplemental Gas Adding System," by T. Suzuki et al., Journal of Electrochemical Society, vol. 132, No. 6, Jun. 1985, pp. 1480-1487.

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