MOCVD apparatus and MOCVD method

Details MOCVD apparatus and MOCVD method MOCVD apparatus and MOCVD method

2006-07-18

2006-07-18

Kackar, Ram N (Department: 1763)

Coating apparatus

Gas or vapor deposition

C118S730000, C118S720000, C118S725000, C156S345330, C156S345340

Reexamination Certificate

active

07077911

ABSTRACT:
The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate. The passage has a cross-sectional area that is smaller than the area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate.

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