Mobility-modulation field-effect transistor

Details Mobility-modulation field-effect transistor Mobility-modulation field-effect transistor

1983-04-13

1987-08-18

James, Andrew J.

357 16, 357 61, H01L 2980, H01L 2920, H01L 29205

Patent

active

046880615

ABSTRACT:
A mobility-modulation FET utilizes a mobility-modulation system in which the mobility .mu. of the carriers within the channel is modulated by a signal voltage applied to gate electrodes. More particularly, in order to eliminate the limit in the response speed dependent upon the channel transit time of the carriers, a mobility-modulation system in which the channels are so formed as to vary the carrier mobility in response to the applied gate voltage is utilized, which is different from the carrier density modulation system, to thereby increase the response speed considerably.

REFERENCES:
patent: 4236167 (1980-11-01), Woods
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4450462 (1984-05-01), Nuyen
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
patent: 4471366 (1984-09-01), Delagebeaudeuf et al.

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