Mobility measurements of inversion charge carriers

Details Mobility measurements of inversion charge carriers Mobility measurements of inversion charge carriers

2008-05-28

2010-02-16

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S754120

Reexamination Certificate

active

07663393

ABSTRACT:
A method and device for determining the quality of the interface surface between a layer of a dielectric material and the top surface of the semiconductor substrate are disclosed. In one aspect, the method comprises providing a semiconductor substrate with a top surface whereon a layer of a dielectric material is deposited thereby forming an interface surface, the surface of the layer of the dielectric material being or not in direct contact with the semiconductor substrate defining a top surface. A charge is then applied on a dedicated area of the top surface. A voltage Vs is measured on the top surface. The dedicated area is illuminated to define an illuminated spot. The photovoltage is measured inside and outside the determined illuminated spot during the illumination of the area.

REFERENCES:
patent: 5442297 (1995-08-01), Verkuil
patent: 5519334 (1996-05-01), Dawson
Schroder, Dieter K. “Surface voltage and surface photovoltage: history, theory and applications”, Measurement Science and Technology, vol. 12, No. 3, Mar. 1, 2001, pp. R16-R31.
Son, et al., “Noncontact probing of metal-oxide semiconductor inversion layer mobility”, Applied Physics Letters, AIP, American Institute of Physics, vol. 69, No. 12, Sep. 16, 1996, pp. 1779-1780.
Takagi, et al., “Experimental Evidence Of Inversion-Layer Mobility Lowering In Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors With Direct Tunneling Current”, Japanese Journal of Applied Physics, vol. 41, Apr. 2002, pp. 2348-2352.
Faifer, et al., “Characterization of ultrashallow junctions using frequency-dependent junction photovoltage and its lateral attenuation”, Applied Physics Letters, vol. 89, 151123, Oct. 13, 2006.
European Search Report dated May 7, 2008, for EP 07 11 8673.

Affiliated with

Also associated with

Rating

Mobility measurements of inversion charge carriers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mobility measurements of inversion charge carriers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mobility measurements of inversion charge carriers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4230901