Mobility enhancement in SiGe heterojunction bipolar transistors

Details Mobility enhancement in SiGe heterojunction bipolar transistors Mobility enhancement in SiGe heterojunction bipolar transistors

2005-08-26

2009-06-09

Potter, Roy K (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Washed emitter

C438S345000

Reexamination Certificate

active

07544577

ABSTRACT:
The present invention relates to a high performance heterojunction bipolar transistor (HBT) having a base region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 nm thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content. The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.

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