Mobility enhanced CMOS devices

Details Mobility enhanced CMOS devices Mobility enhanced CMOS devices

2006-02-28

2009-08-04

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S057000, C257S192000, C257S213000, C257SE21546, C257SE29104, C257SE29193, C257SE31035, C257SE33009

Reexamination Certificate

active

07569848

ABSTRACT:
Compressive or tensile materials are selectively introduced beneath and in alignment with spacer areas and adjacent to channel areas of a semiconductor substrate to enhance or degrade electron and hole mobility in CMOS circuits. A process entails steps of creating dummy spacers, forming a dielectric mandrel (i.e., mask), removing the dummy spacers, etching recesses into the underlying semiconductor substrate, introducing a compressive or tensile material into a portion of each recess, and filling the remainder of each recess with substrate material.

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