Mobile ion getterer for metal conductors

Details Mobile ion getterer for metal conductors Mobile ion getterer for metal conductors

1989-03-22

1991-05-14

Prenty, Mark

Fishing, trapping, and vermin destroying

357 71, 357 78, 437197, 428620, H01L 2348, H01L 2336, H01L 2144, H01L 2912

Patent

active

050160818

ABSTRACT:
A mobile ion getterer is added to metalization layers on an integrated circuit or discrete device to reduce mobile ion contamination therein. Preferably, chromium is used as the mobile ion getterer and is added to an aluminum target used as the metal source for sputtering the chromium and aluminum onto the integrated circuit or discrete device. This technique removes the need for ultra-high purity aluminum conductors or gettering material (P-glass) in contact with the metal conductors. This technique may be used with virtually all metalization apparatus and processes used for depositing metal onto semiconductor devices.

REFERENCES:
patent: 4017890 (1977-04-01), Howard et al.
patent: 4561009 (1985-12-01), Yonezawa et al.
patent: 4899206 (1990-02-01), Sakurai et al.
VLSI Technology, First edition, 1983, pp. 255-257 by Sze.
VLSI Technology, Second edition, 1988, p. 226, by Sze.

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