Stock material or miscellaneous articles – All metal or with adjacent metals – Having metal particles
Patent
1996-09-06
1999-06-15
Scheiner, Laurie
Stock material or miscellaneous articles
All metal or with adjacent metals
Having metal particles
428385, 313 60, C22C 2704, C23C 1434, B22F 300
Patent
active
059131004
DESCRIPTION:
BRIEF SUMMARY
DESCRIPTION
1. Technical Field
This invention relates to a Mo-W material for the formation of wiring, a Mo-W target for the formation of wiring and a method for the production thereof, and a Mo-W wiring thin film.
2. Background of Art
In recent years, the active matrix type liquid crystal display devices using as a switching element thereof a thin film transistor (hereinafter referred to as "TFT") formed by using an amorphous silicon (hereinafter referred to as "a-Si") film have been attracting attention. This is because there exists the possibility that a panel display having a large area, high accuracy, and high quality, namely a flat television, will be realized inexpensively by forming a TFT array with an a-Si film producible at low temperature on an inexpensive glass substrate.
In the construction of a display of a large area, however, the amount of resistance offered by the address wiring to be laid therein is increased because the gross length of the address wiring is inevitably increased to a marked extent. This increase in the amount of resistance of the address wiring entrains the problem of conspicuously delaying gate pulses to be given to switch elements and rendering control of a liquid crystal difficult. It is, therefore, necessary that the delay of gate pulses be avoided while retaining at least such parameters as wiring widths intact.
As one measure to avoid the delay of gate pulses, the idea of forming the address wirings with a wiring material which possesses as low resistivity as permissible may be conceived. At present, the Mo-Ta alloy film is often used as the material for the address wirings. Since this alloy film has such large resistivity as about 40 .OMEGA..multidot.cm, it is held that the resistivity of the Mo-Ta alloy film renders difficult the realization of a display of a large area. Particularly, the direct-view type display of high accuracy using about 1000 address wirings is considered to require a wiring material possessing resistivity of not more than about 20 .mu..OMEGA.cm.
The new wiring material of such quality as mentioned above is required to possess such characteristics as will be shown below in addition to the low resistivity mentioned above. Since the insulation between the wirings and the address wirings which are formed on an interlayer insulating film must be heightened by improving the step coverage of the interlayer insulating film formed on the address wirings, this new wiring material must be capable of being tapered.
The realization of a liquid crystal display device which, owing to the formation of address wirings with a wiring material of low resistance, is enabled to repress the delay of gate pulses and, at the same time, acquire necessary insulation and enjoy high reliability is yearned for. The desire of this kind has been expressed not merely for liquid crystal display devices having a display of a large area but equally for liquid crystal display devices having wirings and wiring intervals narrowed for the purpose of exalting the accuracy of display or liquid crystal display devices having an opening ratio improved by decreasing the width of wirings.
The conventional liquid crystal display devices have such problems as shown below in addition to those already remarked above. FIG. 5 is a cross section of a TFT (switching element) and a storage capacity part to be used in a liquid crystal display device.
By sputtering a Mo-Ta alloy, a gate electrode 2, address wirings, address wirings, and a Cs line 9 are simultaneously formed on a glass substrate 1 as shown in FIG. 5. Through the medium of a gate insulating film 3 which is formed thereon, an a-Si active layer 4 is superposed. On the opposite end parts of this active layer 4, n.sup.+ a-Si layers 5a and 5b are deposited. Then, through the medium of the gate insulating film 3, an ITO picture element electrode 8 is formed. Subsequently, an Al source electrode 6a having a part thereof connected to the n.sup.+ a-Si layer 5a, a drain electrode 6b having a part thereof connected to the n.sup.+ a-Si layer 5b
REFERENCES:
patent: 3778654 (1973-12-01), Hueschen et al.
Fukasawa Yoshiharu
Ikeda Mitsushi
Kohsaka Yasuo
Maki Toshihiro
Sato Michio
Kabushiki Kaisha Toshiba
Scheiner Laurie
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