MO/TI Contact to silicon

Details MO/TI Contact to silicon MO/TI Contact to silicon

1989-11-30

1991-01-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437203, 357 65, 357 71, 148DIG20, 156643, 156656, H01L 2100, H01L 2102, H01L 2128, H01L 2188

Patent

active

049818163

ABSTRACT:
A metal for fabricating contact structures through via openings in VLSI circuits employs a dual layer of refractory metal. A thin titanium layer is deposited, over which a molybdenum layer is formed. An annealing treatment further improves contact resistance characteristics. The method results in a contact structure which exhibits desirable properties of thermal compatibility, step coverage, contact resistance and improved processing characteristics.

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Chow, T, Plasma Etching of Refractory Gates for VLSI Applications, J. Electrochem Soc., Sol. State Sci & Tech., Oct. 1984, pp. 2325-2335.
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