Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1977-11-28
1982-04-06
Clawson, Jr., Joseph E.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 13, 357 54, 365184, H01L 2980
Patent
active
043239102
ABSTRACT:
A memory transistor includes a body of semiconductor material having therein a channel region of one conductivity type and source and drain regions of the opposite conductivity type. A channel insulation is on the surface of the semiconductor body and extends over the channel region. The channel insulation includes a first layer of silicon dioxide directly on the surface of the semiconductor body and a layer of silicon nitride on the silicon dioxide layer. A gate of conductive polycrystalline silicon is preferable provided on the channel insulation. The channel of the transistor is sufficiently narrow so that electrons can be avalanched into the interface between the silicon nitride layer and the silicon dioxide layer completely across the full width of the channel where the electrons can be stored.
REFERENCES:
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patent: 3738880 (1973-06-01), Laker
patent: 3836894 (1974-09-01), Cricchi
patent: 3889287 (1975-06-01), Powell
patent: 3893152 (1975-07-01), Lin
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patent: 4123771 (1978-10-01), Uchida
J. Wallmark et al., "Switching and Storage Characteristics of Mis Memory Transistors", RCA Review, vol. 30, pp. 335-365, Jun., 1969.
Ipri Alfred C.
Sokoloski Joseph C.
Christoffersen Harold
Clawson Jr. Joseph E.
Cohen Donald S.
RCA Corporation
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