MNOS Memory device and method of manufacture

Details MNOS Memory device and method of manufacture MNOS Memory device and method of manufacture

1979-08-27

1981-12-08

Wojciechowicz, Edward J.

357 23, 357 91, H01L 2934

Patent

active

043050867

ABSTRACT:
A metal nitride oxide semiconductor (MNOS) memory device having improved memory retention capability is described. Improved memory retention is obtained by ion implanting a non-doping material, such as argon or nitrogen, or a low concentration of an N type dopant, such as phosphorus, into the oxide before depositing the nitride layer. It is believed that the ion implantation results in a nitride-oxide interface conducive to charge storage. The MNOS device produced has a considerably improved memory retention characteristic when compared with an MNOS device which did not have the ion implantation.

REFERENCES:
patent: 4047974 (1977-09-01), Harari

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