MNOS memory cell without sidewalk

Details MNOS memory cell without sidewalk MNOS memory cell without sidewalk

1983-02-07

1986-04-29

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 54, 365184, 307303, H01L 2978, G11C 1140

Patent

active

045860653

ABSTRACT:
A non-volatile memory cell of the MNOS type, in which the sidewalk effect is avoided or at least considerably reduced by limiting the extension of the boundary layer, in which charge is stored, to a region which is smaller than the thin gate dielectric covered by the gate electrode. The gate electrode extends from the active region over a thin insulator, in which no charge storage takes place, to above the thicker field insulation.

REFERENCES:
patent: 4096509 (1978-06-01), Blaha et al.
patent: 4249191 (1981-02-01), Hsia
patent: 4305086 (1981-12-01), Khajezadeh
patent: 4353083 (1982-10-01), Trudel et al.
patent: 4454524 (1984-06-01), Spence
patent: 4467452 (1984-08-01), Saito et al.
Chang, "Nonvolatile Semiconductor Memory Devices," Proceedings of the IEEE, vol. 64, No. 7, Jul. 1976.

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