Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-04-15
1999-07-27
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257764, 257280, H01L 29812
Patent
active
059294736
ABSTRACT:
An SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 nm) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
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patent: 5283462 (1994-02-01), Stengel
patent: 5440174 (1995-08-01), Nishitsuji
patent: 5486488 (1996-01-01), Kamiyama
"Low Leakage, Temperature Invariant, High Dielectric Constant Films, using Multilayered Sol-Gel Fabrication," IBM Technical Disclosure Bulletin, vol. 37, No. 9, Sep. 1994, p. 27.
Sandwip, et al., "Cubic Paraelectric (Nonferroelectric) Perovskite PLT Thin Films with High Permittivity for ULSI DRAM's and Decoupling Capacitors," IEEE Transactions on Electron Devices, vol. 39, No. 7, Jul. 1992, pp. 1607-1613.
Abe Kazuhide
Aoyama Tomonori
Kitaura Yoshiaki
Komatsu Shuichi
Nishihori Kazuya
Guay John
Kabushiki Kaisha Toshiba
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