Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1987-09-24
1988-09-13
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330307, H03F 3193
Patent
active
047712473
ABSTRACT:
The invention relates to a low noise amplifier for use at microwave frequencies which may be fabricated using integrated circuit techniques. In accordance with the invention, critical components are made adjustable so as to simplify the design process and manufacturability of the amplifier. A two stage low noise amplifier is disclosed in which TEE networks are used as input and output networks in each stage, and in which one element of each TEE includes an adjustable spiral inductor. The value of each adjustable spiral inductor may be adjusted by removal of one or more air bridges disposed along the inner turn of the inductor. This permits one to "tune" the amplifier and optimize its performance.
REFERENCES:
patent: 4614915 (1986-09-01), Heston et al.
Tajima et al, "X, Ku-Band GaAs Monolithic Amplifier", 1982, IEEE MTT-S Digest, pp. 476-478.
MMIC: On-Chip Tunability, R. Goyal and S. S. Bharj Microwave Journal, Apr. 1987, (pp. 135, 138 and 139).
Baker Carl W.
General Electric Company
Jacob Fred
Lang Richard V.
Mullins James B.
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