Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With resistive region connecting separate sections of device
Reexamination Certificate
2006-02-28
2006-02-28
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With resistive region connecting separate sections of device
C257S155000, C438S133000
Reexamination Certificate
active
07005686
ABSTRACT:
Disclosed is a method for increasing substrate resistance in a silicon controlled rectifier in order to decrease turn on time so that the silicon controlled rectifier may be used as an effective electrostatic discharge protection device to protect against HBM, MM and CDM discharge events. Additionally, disclosed is an improved SCR structure that is adapted for use as an electrostatic discharge device to protect against human body model events by delivering an electrostatic discharge current directly to a ground rail. The improved SCR structure incorporates various features for increasing substrate resistance and, thereby, for decreasing turn on time. These features include a second n-well that functions as an obstacle to current flow, a narrow current flow channel between co-planar buried n-bands connected to a lower portion of the second n-well, a zero threshold voltage area, and an external resistor electrically connected between the SCR and the ground rail.
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Chatty Kiran V.
Gauthier Jr. Robert J.
Muhammad Mujahid
Stricker Andreas D.
Woo Min
Gibb I.P. Law Firm LLC
Pert Evan
Sabo, Esq. William D.
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