Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...
Patent
1985-02-11
1986-10-21
Beha, Jr., William H.
Electricity: power supply or regulation systems
Self-regulating
Using a three or more terminal semiconductive device as the...
330288, G05F 326
Patent
active
046188150
ABSTRACT:
An MOS current mirror arrangement is disclosed wherein selected ones of the input and output transistors are designed to have a threshold voltage, V.sub.T1, greater in magnitude that associated with standard MOS devices. The larger threshold voltage thus eases the requirement that the turn-on voltage, V.sub.ON, remain less than the threshold voltage V.sub.T, for the devices to remain in the active region of operation. Since a minimum value of V.sub.T is useful for some applications (fast processing and operation at high temperatures) the use of mixed thresholds allows both requirements to be met by adjusting the thresholds of selected devices associated with these different requirements. The difference in threshold voltages can be attained simply by adjusting the threshold adjust implant mask to protect selected devices from the ion implantation conventionally used to decrease the magnitude of the threshold voltage.
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"Threshold Adjustment of N-Channel . . .", 1973 IEDM, 12/73, P. Peressini et al, pp. 467-468.
AT&T Bell Laboratories
Beha Jr. William H.
Koba Wendy W.
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