Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-06-03
1999-03-30
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257501, 438430, H01L 2712
Patent
active
058893148
ABSTRACT:
A cross-talk source isolator is provided in an integrated circuit which has an impurity diffused substrate of low resistance on which a silicon region is developed. A digital and analog circuits are formed on the silicon region. A trench is formed in the silicon region, in a direction substantially normal to a major surface of the substrate, in a manner to separate said digital and analog circuits. The trench has a bottom portion reaching the substrate and having an inner wall covered with a dielectric material. The trench includes therewithin an electrically conductive member which has a first end portion electrically connected to the substrate. Further, the electrically conductive member has a second end portion, opposite to the first end portion, coupled to an electrode which leads to a reference voltage source such as ground.
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Kuntal Joardar, "A Simple Approach to Modeling Cross-Talk in Integrated Circuits", IEEE Journal of Solid-State Circuits, vol. 29, No. 10, Oct. 1994, pp. 1212-1219.
Hardy David B.
NEC Corporation
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