Mixed metal oxide film having an accelerant

Details Mixed metal oxide film having an accelerant Mixed metal oxide film having an accelerant

1996-07-11

1998-07-07

Brunsman, David

Compositions: coating or plastic

Coating or plastic compositions

Aluminum compound containing

10628718, 10628719, 10628723, 10628729, C03C 100

Patent

active

057762368

ABSTRACT:
Silicon compounds useful as coating reactants for the chemical vapor deposition of silicon oxide are disclosed, along with compounds useful as accelerants to increase the deposition rate of silicon oxide. The silicon-containing precursor comprises the structural formula ##STR1## wherein R.sub.1 is an alkyl, alkenyl, alkynyl or aryl radical which may be substituted, and R.sub.2 is a functional group which increases the reactivity of the silicon compound by withdrawing electron density away from the silicon atom, such as hydrogen, halogen, alkenyl, alkynyl, halogenated alkyl and perhalogenated alkyl radicals. The accelerant is a compound selected to take advantage of the partial positive charge on the silicon atom. Such accelerant compounds include Lewis acids and bases; water; ozone; trivalent compounds of nitrogen, boron and phosphorus; tetravalent compounds of sulfur and selenium; pentavalent compounds of phosphorus and a variety of metal compounds. Also disclosed are compositions including an additional metal-containing coating precursor, such as an organotin compound, to deposit another metal oxide along with silicon oxide.

REFERENCES:
patent: 5122391 (1992-06-01), Mayer
patent: 5401305 (1995-03-01), Russo et al.
Adams, A. C. et al.; "The High Temperature Deposition and Evaluation of Phosphorus-or Boron-Doped Silicon Dioxide Films"; J. Electrochem. Soc. Solid-State Science and Technology; pp. 313-319, (Feb. 1979).
Winkle, L. W. et al.; "Improved Atmospheric-Pressure Chemical-Vapor-Deposition System for Depositing Silica and Phosphosilicate Glass Thin Films"; Solid State Technology; pp. 123-128, (Oct. 1981).
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Bartholomew, L. D. et al.; "Doped SiO.sub.2 Deposition from TMP in APCVD"; Eur. Trans. Telecommun. Relat. Technology; vol. 1, N. 2, pp. 167-172 (Mar.-Apr. 1990).
Pignatel, G. U. et al.; "The APCVD Growth of the PSG and BPSG Films Using Tertiarybutylphosphine as a Phorphorus Dopant" J. Electrochem. Soc.; vol. 138, No. 6, pp. 1723-1728, (Jun. 1991).
Tedder, L. L. et al., "Catalytic Effect of Phosphine on the Depositioin of Phosphosilicate Glass from Tetraethoxysilane", Appl. Phys. Lett.; vol. 62, No. 7, pp. 699-700, 15 (Feb. 1993).
Fujino, K. et al., "TEOS and Ozone Atmospheric Pressure CVD of Borophosphosilicate Glass Films Using Triethylborate and Trimethylphosphate"; J. Electrochem. Soc.; vol. 140, No. 10, pp. 2922-2927, (Oct. 1993).
Ahmed, W. et al.; "Chemical Vapour Deposition (CVD) of Borophosphosilicate Glass Films"; Journal of Materials Science: Materials in Elecronics 7; pp. 127-131, (1996) no month avail.
Mayer, Bruce; "Highly conductive and transparent films of tin and fluorine doped indium oxide produced by APCVD"; Thin Solid Films; 221, (1992 Dec.) 10, No. 1/2, pp. 166-182.

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