Mixed barrier resonant tunneling

Details Mixed barrier resonant tunneling Mixed barrier resonant tunneling

1994-08-15

1998-03-03

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

H01L 2906, H01L 2924

Patent

active

057238723

ABSTRACT:
A resonant tunneling diode (400) made of a quantum well (406) with tunneling barriers (404, 408) made of two different materials such as calcium fluoride (408) and silicon dioxide (404). The calcium fluoride provides lattice match between the emitter (410) and the quantum well (406). Further resonant tunneling diodes with silicon lattice match barriers may be made of III-V compounds containing nitrogen.

REFERENCES:
patent: 3121177 (1964-02-01), Davis
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4665412 (1987-05-01), Ohkawa et al.
patent: 4878104 (1989-10-01), Reed et al.
patent: 4914488 (1990-04-01), Yamane et al.

Affiliated with

Also associated with

Rating

Mixed barrier resonant tunneling does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mixed barrier resonant tunneling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mixed barrier resonant tunneling will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2251031