Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Reexamination Certificate
2006-08-29
2006-08-29
Zimmer, Marc S. (Department: 1712)
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
C427S255150, C427S255180, C427S255190, C427S255700, C428S446000, C428S450000
Reexamination Certificate
active
07097878
ABSTRACT:
A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.
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Hausmann Dennis M.
Nie Bunsen
Papasouliotis George D.
Rulkens Ron
Tarafdar Raihan M.
Beyer Weaver & Thomas LLP.
Novellus Systems Inc.
Zimmer Marc S.
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