Mitigation of runaway programming of a memory device

Details Mitigation of runaway programming of a memory device Mitigation of runaway programming of a memory device

2011-01-04

2011-01-04

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220

Reexamination Certificate

active

07864589

ABSTRACT:
Methods for mitigating runaway programming in a memory device, methods for program verifying a memory device, a memory device, and a memory system are provided. In one such method, a ramp voltage signal is generated by a digital count signal. A memory cell being program verified is turned on by a particular verify voltage of the ramp voltage signal in response to a digital count of the digital count signal. The memory cell turning on generates a bit line indication that causes the digital count to be compared to a representation of the target data to be programmed in the memory cell. The comparator circuit generates an indication when the digital count is greater than or equal to the target data.

REFERENCES:
patent: 7194571 (2007-03-01), Yada et al.

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