Mitigation of deleterious effects of micropipes in silicon...

Details Mitigation of deleterious effects of micropipes in silicon... Mitigation of deleterious effects of micropipes in silicon...

2000-08-08

2002-09-10

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S134000

Reexamination Certificate

active

06448581

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to semiconductor devices made from silicon carbide.
BACKGROUND OF THE INVENTION
Silicon carbide (SiC) has a thermal conductivity three times that of silicon, a breakdown field ten times higher than silicon, and a saturated drift velocity twice that of silicon. This makes it suitable for certain high power or high voltage devices. However, state of the art SiC wafers have a finite density of micropipes (30 to 200 cm-
2
). These micropipes cause yield problems when a device such a field effect transistor is located, or partially located, over a micropipe. See, for example, P. G. Neudeck and J. A. Powell, “Performance Limiting Micropipe Defects in Silicon Carbide Wafers. ” IEEE Electron Device Letters, Vol. 15, No. 2, pp. 63-65, (1994).
SUMMARY OF THE INVENTION
The invention includes a semiconductor device, comprising a silicon carbide substrate comprising micropipes, wherein the micropipes are filled with a dielectric, and a method of making such a device.


REFERENCES:
patent: 5679153 (1997-10-01), Dmitriev et al.
patent: 5958132 (1999-09-01), Takahashi et al.
patent: 6187279 (2001-02-01), Tanino et al.
patent: 6214108 (2001-04-01), Okamoto et al.

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