MISFET (Metal-insulator-semiconductor field-effect transistor) l

Details MISFET (Metal-insulator-semiconductor field-effect transistor) l MISFET (Metal-insulator-semiconductor field-effect transistor) l

1975-05-29

1976-06-22

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307205, 307215, 307218, 307224C, G11C 1928, H03K 2322, H03K 1908, H03K 1920

Patent

active

039653692

ABSTRACT:
In a logic circuit having a load MISFET of the depletion type, a MISFET logic circuit employs a logic block of a predetermined logic expression, and a MISFET of the enhancement type. The depletion type MISFET, the logic block and the enhancement type MISFET are connected in series. The enhancement type MISFET is driven by clock pulses so that, only when it is conductive, current flows through the series circuit. Thus, the amount of power consumption is lowered.

REFERENCES:
patent: 3526783 (1970-09-01), Booher
patent: 3567968 (1971-03-01), Booher
patent: 3700981 (1972-10-01), Masuhara et al.
lohman, "Applications of MOSFETS in Microelectronics"; SCP and Solid State Technology, 3/1966; pp. 23-29.

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