Misfet circuit for reading the state of charge

Communications: electrical – Digital comparator systems

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307291, 340173FF, 340173CA, G11C 706, G11C 1124, G11C 1140

Patent

active

039493822

ABSTRACT:
In an MIS type semiconductor memory device which has at least two parasitic capacitors and which delivers, at its outputs, the state of charge accumulated in at least one of the parasitic capacitors, the respective parasitic capacitors are provided with inverter circuits. Each of the inverter circuits receives, as an input signal, the state of charge accumulated in the corresponding parasitic capacitor. When charges accumulated by precharging are to be discharged, each inverter forms a discharging path for the opposite parasitic capacitor.

REFERENCES:
patent: 3714638 (1973-01-01), Dingwall et al.
patent: 3774176 (1973-11-01), Stein et al.
patent: 3795898 (1974-03-01), Mehta et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Misfet circuit for reading the state of charge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Misfet circuit for reading the state of charge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Misfet circuit for reading the state of charge will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1580116

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.