MISFET

Details MISFET MISFET

2005-03-08

2005-03-08

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S403000, C257S404000, C257S241000

Reexamination Certificate

active

06864507

ABSTRACT:
P-type active region12; n-type source/drain regions13aand13b; gate insulating film14made of a thermal oxide film; gate electrode15; source/drain electrodes16aand16b, are provided over a p-type SiC substrate11. In the active region12, p-type heavily doped layers12a, which are thin enough to create a quantum effect, and thick undoped layers12bare alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.

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