MIS Type semiconductor photoelectric conversion device

Details MIS Type semiconductor photoelectric conversion device MIS Type semiconductor photoelectric conversion device

1980-12-22

1983-09-06

Davie, James W.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 2, 357 6, 357 23, 136258, H01L 2714, H01L 2978, H01L 4500, H01L 4902

Patent

active

044032390

ABSTRACT:
A MIS type semiconductor photoelectric conversion device in which a first electrode, a first insulating or semi-insulating layer, a semiconductor layer, a second insulating or semi-insulating layer and a second electrode are formed in this order on a supporting member. The first electrode, the first insulating or semi-insulating layer and the semiconductor layer constitute a first MIS structure which uses the first insulating or semi-insulating layer as a first barrier. The semiconductor layer, the second insulating or semi-insulating layer and the second electrode constitute a second MIS structure which uses the second insulating or semi-insulating layer as a second barrier. The first and second MIS structures are formed on the supporting member in such a manner that they are placed one on the other mechanically and connected in series with each other electrically.

REFERENCES:
patent: 3493767 (1970-02-01), Cohen
patent: 4040073 (1977-08-01), Luo
patent: 4117506 (1978-09-01), Carlson et al.

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