MIS-type semiconductor device of LDD structure and manufacturing

Details MIS-type semiconductor device of LDD structure and manufacturing MIS-type semiconductor device of LDD structure and manufacturing

1991-10-17

1992-08-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 45, 437907, 437984, 357 234, H01L 21265

Patent

active

051418916

ABSTRACT:
An MIS-type semiconductor device comprises PSD structure and LDD structure. The LDD structure comprises high concentration impurity regions formed by thermally diffusing impurities which have been contained in source/drain electrode conductive layers made of polysilicon onto a semiconductor substrate, and low concentration impurity regions formed through ion implantation using resist patterned on channel regions and the source/drain electrode conductive layers as mask. A gate electrode is formed, after formation of the low concentration impurity regions, to cover them and have its edges overlap the source/drain electrode conductive layers. The LDD structure suppresses the short channel effects which might be caused in the MIS-type semiconductor device and thus enables channels length to be miniaturized while the PSD structure enables also miniaturization of source/drain structure.

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