MIS type integrated circuit device

Details MIS type integrated circuit device MIS type integrated circuit device

1974-03-05

1976-01-13

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 42, 307304, H01L 2702, H01L 2978, H03K 3353

Patent

active

039328848

ABSTRACT:
A metal-insulator-semiconductor type integrated circuit includes a semiconductor substrate of a first conductivity type and a power supply for a back-gate bias. The substrate is connected to the power supply by a switching means. A region of a second conductivity type, which is grounded, is formed on a major surface of the substrate. The potential of the semiconductor substrate is clamped at a predetermined level by a clamping means connected between the above-mentioned region and the substrate.

REFERENCES:
patent: 3434068 (1969-03-01), Sevin
patent: 3787717 (1974-01-01), Fischer et al.

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