MIS-type field effect transistor and method of producing the sam

Details MIS-type field effect transistor and method of producing the sam MIS-type field effect transistor and method of producing the sam

1977-11-16

1979-09-11

Wojciechowicz, Edward J.

357 55, 357 56, H01L 2978

Patent

active

041677455

ABSTRACT:
An MIS-type field effect transistor, comprising a semiconductor substrate having a projection, source and drain regions formed in the substrate with the projection intervening therebetween, and a gate structure formed on the surface of the projection. The transistor is advantageous for enhancing the integration degree of an integrated circuit.

REFERENCES:
patent: 4074300 (1978-02-01), Sakai et al.

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