Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-04-20
1994-11-01
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257533, 257535, 257577, H01L 2702
Patent
active
053609891
ABSTRACT:
An MIS capacitor for bipolar integrated circuits includes an island region of one conductivity type, a first semiconductor layer of one conductivity type formed in the island region, an insulating layer provided on the first semiconductor layer, a capacitor electrode provided on the insulating layer to provide an MIS capacitor element, and a second semiconductor layer of an opposite conductivity type for providing a PN junction with the first semiconductor layer. When the MIS capacitor element is reverse biased, majority carriers of the second semiconductor layer are supplied to a depletion layer generated in the first semiconductor layer, thereby providing an MIS capacitor having an approximately constant capacitance even if it is biased in a forward or reverse direction.
REFERENCES:
patent: 4247826 (1981-01-01), Gappa et al.
Patent Abstracts of Japan, vol. 8, No. 235 (E-275)(1672) Oct. 27, 1984 & JP-59 117 256 (Hitachi) Jul. 6, 1984.
IBM Technical Disclosure Bulletin, vol. 23, No. 3, Aug. 1980, p. 1091; H. V. Roeder: `Controllable Mos Capacitor`.
Carroll J.
Kabushiki Kaisha Toshiba
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