MIS transistor structure for increasing conductance between sour

Details MIS transistor structure for increasing conductance between sour MIS transistor structure for increasing conductance between sour

1989-06-30

1991-02-26

Hille, Rolf

357 2314, 357 55, 357 56, 357 231, 357 2, 357 4, H01L 2978

Patent

active

049965743

ABSTRACT:
A metal-insulator-semiconductor transistor comprises an insulator layer, a semiconductor body provided on the insulator layer and comprising a source region, a drain region and a channel region extending in a first direction between and interconnecting the source region and the drain region, a gate insulator film provided on the semiconductor body so as to cover the channel region except for the part of the channel region in contact with the insulator layer, and a gate electrode of a conductive material provided in contact with the gate insulator film so as to cover the channel region underneath the gate insulator film except for the part of the channel region in contact with the insulator layer. The channel region has a width substantially smaller than twice the maximum extension of the depletion region formed in the channel region.

REFERENCES:
patent: 4425572 (1984-01-01), Takafuji et al.
Colinge, "Subthreshold Slope of Thin-Film Soi Mosfet's", IEEE Electron Device Letters, vol. EDL-7, No. 4, Apr. 1986.

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