MIS transistor driven inverter circuit capable of individually c

Details MIS transistor driven inverter circuit capable of individually c MIS transistor driven inverter circuit capable of individually c

1988-01-13

1990-06-05

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307263, 307268, H03K 1716, H03K 19094

Patent

active

049316680

ABSTRACT:
A resistor is connected to an input portion of a CMOS inverter. An input of the CMOS inverter is affected by a time constant of an RC circuit comprising the resistor and gate stray capacitance of the CMOS inverter. In addition, there is provided an n channel MOS transistor having a drain and a source connected to both ends of the resistor, respectively, and a gate connected to an input signal source. Only in the rising portion of an input signal, the n channel MOS transistor is turned on, so that the resistor is bypassed. Thus, a waveform of output of the CMOS inverter is not delayed at the falling portion. Only at the rising portion, the waveform thereof is delayed due to the time constant of the above described RC circuit.

REFERENCES:
patent: 4115740 (1978-09-01), Yoshido
patent: 4365316 (1982-12-01), Iwahashi et al.

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