1990-08-09
1991-09-17
Jackson, Jr., Jerome
357 30, H01L 4500, H01L 2714, H01L 3100
Patent
active
050499505
ABSTRACT:
A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disposed thereon. The metal layer is biased with a negative voltage so that the capacitance between the metal layer and the semiconductor layer changes in response to whether on the metal layer is illuminated with light.
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Fujii Yoshihisa
Furukawa Katsuki
Nakanishi Kenji
Ogura Atsuko
Shigeta Mitsuhiro
Jackson, Jr. Jerome
Meier Stephen D.
Sharp Kabushiki Kaisha
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