MIS SOI semiconductor device with RTD and/or HET

Details MIS SOI semiconductor device with RTD and/or HET MIS SOI semiconductor device with RTD and/or HET

1997-10-21

2000-07-18

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 26, 257 29, 257348, 257350, H01L 2988, H01L 2906

Patent

active

060910771

ABSTRACT:
The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.

REFERENCES:
patent: 5444267 (1995-08-01), Okada et al.
patent: 5514614 (1996-05-01), Yuki et al.
patent: 5541422 (1996-07-01), Wolf et al.
patent: 5723872 (1998-03-01), Seabaugh et al.
patent: 5739544 (1998-04-01), Yuki et al.

Affiliated with

Also associated with

Rating

MIS SOI semiconductor device with RTD and/or HET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS SOI semiconductor device with RTD and/or HET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS SOI semiconductor device with RTD and/or HET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2039063