MIS semiconductor device and method of manufacturing the same

Details MIS semiconductor device and method of manufacturing the same MIS semiconductor device and method of manufacturing the same

1976-04-14

1977-08-09

Wojciechowicz, Edward J.

357 41, 357 42, 357 43, 357 59, H01L 2978, H01L 2904, H01L 2702

Patent

active

040415180

ABSTRACT:
A metal-insulator semiconductor (MIS) device is manufactured by initially forming, on a semiconductor substrate, an insulating film having a hole therethrough and depositing silicon on the substrate to form a first monocrystalline silicon film in the hole and a polycrystalline silicon film on the insulating film. Then, a further insulating film is formed on the first silicon film, and a second silicon film is formed on the further insulating film. The second silicon film and the further insulating film are removed, so that the monocrystalline and polycrystalline parts of the first silicon film are exposed at both sides of the remaining part of the second silicon film and the further insulating film. Finally, an impurity is diffused to form a source and a drain region in the monocrystalline silicon film and conductive layers of polycrystalline silicon are disposed contiguous to the source and drain regions.

REFERENCES:
patent: 3699646 (1972-10-01), Vadasz
patent: 3749610 (1973-07-01), Swann et al.
patent: 3750268 (1973-08-01), Wang
patent: 3764413 (1973-10-01), Kakizaki et al.

Affiliated with

Also associated with

Rating

MIS semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1232476