Mis semiconductor device and method of fabricating the same

Details Mis semiconductor device and method of fabricating the same Mis semiconductor device and method of fabricating the same

1994-01-18

1996-06-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437174, 437 21, 437 40, 437 44, H01L 2126

Patent

active

055232574

ABSTRACT:
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.

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