Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-05-28
1998-04-07
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257346, 257392, 257411, H01L 2702, H01L 2904
Patent
active
057367507
ABSTRACT:
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
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Takemura Yasuhiko
Yamazaki Shunpei
Ferguson Jr. Gerald J.
Monin Donald
Semiconductor Energy Laboratory Co,. Ltd.
Smith Evan R.
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