Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-01-08
1999-08-17
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257 67, 257 69, 257 72, H01L 29786, H01L 310392
Patent
active
059397314
ABSTRACT:
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the equivalent strong light are radiated onto the impurity regions and on an boundary between the impurity region and an active region adjoining the impurity region.
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Takabatake, IEEE Trans. on Elec. Dev. vol. 38 No. 6 Jun. 1991 CMOS . . . 600.degree. C pp. 1303-1309.
Takemura Yasuhiko
Yamazaki Shunpei
Jackson, Jr. Jerome
Robinson Eric J.
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