MIS-integrated semiconductor device

Details MIS-integrated semiconductor device MIS-integrated semiconductor device

1986-02-19

1987-01-06

Carroll, J.

357 4, 357231, 357 41, 357 45, 357 56, H01L 2712, H01L 2978, H01L 2702, H01L 2906

Patent

active

046350896

ABSTRACT:
The present invention aims to form a MOST, for example a MOS-SIT, whose impurity density in a channel region is lower than an ordinary MOST on a substrate or is formed in an epitaxial growth layer on a well.

REFERENCES:
patent: 4161417 (1979-07-01), Yim et al.
patent: 4472871 (1984-09-01), Green et al.
patent: 4487639 (1984-12-01), Lam et al.
L. M. Terman, "Combining Bipolar and FET Devices on a Single Silicon Substrate", IBM Technical Disclosure Bulletin, vol. 11 (1969), pp. 1270-1271.

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