Patent
1986-01-16
1989-02-21
Edlow, Martin H.
357 24, H01L 2978, H01L 2714
Patent
active
048070076
ABSTRACT:
A method and an apparatus which permits use of a metal-insulator-semiconductor device as an infrared detector. A single layer of metal is provided having an extremely thin portion through which infrared radiation can pass and a thick portion through which infrared radiation cannot pass. Both of these portions together form the MIS (metal-insulator-semiconductor) gate. A voltage is applied to the metal which creates a potential well within the semiconductor substrate below. When the device is exposed to infrared radiation the radiation, causes photons to pass through the thin portion of the MIS gate and generates a charge within the potential well. The thick portion of the MIS gate shields the semiconductor substrate from photons so that no charges are generated in the potential well which is located below this portion of the metal layer. This provides a charge storage region so that the charge which is generated under the thin gate can be stored in the entire potential well created by the gate as a whole. This results in an MIS device having a detector cell which can be several times larger than photon sensitive dimensions. In effect, each detector element can have a storage capacity of a gate biased to ten volts or more. A three design is also disclosed which has the detection region separated from the storage region.
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Borrello, "Photodetectors," Encyclopedia of Chemical Technology, vol. 17, 3rd Ed., 1982, John Wiley & Sons, pp. 601-611.
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Borrello Sebastian R.
Roberts Charles G.
Edlow Martin H.
Featherstone David J.
Heiting Leo N.
Hoel Carlton H.
Sharp Melvin
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