MIS Heterojunction structures

Details MIS Heterojunction structures MIS Heterojunction structures

1978-01-13

1979-07-03

Edlow, Martin H.

357 16, 357 61, H01L 2978

Patent

active

041602617

ABSTRACT:
In a metal-insulator-semiconductor (MIS) structure, the I-layer comprises a single-crystal, semi-insulating layer which forms a substantially lattice-matched heterojunction with the underlying S-layer. Illustratively, the structure, grown by MBE, includes an indirect gap AlGaAs I-layer doped with a deep level impurity such as oxygen, iron or chromium, and a GaAs S-layer. GaAs FETs incorporating this MIS structure are described.

REFERENCES:
patent: 4062035 (1977-12-01), Winstel

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