MIS-field effect transistor having a short channel length and me

Details MIS-field effect transistor having a short channel length and me MIS-field effect transistor having a short channel length and me

1979-01-02

1981-09-22

Edlow, Martin H.

357 20, 357 59, 357 91, H01L 2978

Patent

active

042913217

ABSTRACT:
An MIS-field effect transistor comprising a semiconductor member provided with an overlying insulating layer and having a source zone and a drain zone of a first conductivity type provided with respective contacting electrodes, and a gate-electrode layer disposed therebetween, with each of said areas being surrounded by a less heavily doped area of the same conductivity type. At the source side, an additional area abuts the source zone and extends to the semiconductor surface beneath the gate-electrode layer, forming a channel having a very short length. The various dopings having different penetration depths are produced by differential implantation. A windowed mask, having windows with beveled edges at the drain-zone and the source zone, is utilized as an implantation mask, which advantageously is formed by the insulating layer and/or by the gate-electrode layer. Such a field effect transistor is particularly suited for integrated semiconductor circuits due to its high breakdown voltage and high switching speed resulting from the short channel length.

REFERENCES:
patent: 3946424 (1976-03-01), Tauri
patent: 4001048 (1977-01-01), Meiling
patent: 4001860 (1977-01-01), Cauge
patent: 4079504 (1978-03-01), Kosa
patent: 4084175 (1978-04-01), Ouyang
patent: 4095251 (1978-06-01), Dennard
patent: 4128670 (1978-12-01), Gaenssler
patent: 4190850 (1980-02-01), Tihanyi

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