Patent
1978-01-17
1980-02-26
Clawson, Jr., Joseph E.
357 20, 357 54, 357 91, H01L 2978
Patent
active
041908503
ABSTRACT:
A MIS field effect transistor having a source zone of a first impurity type formed in a semiconductor substrate immediately below one planar surface thereof, a drain zone of the first conductivity type in said substrate spaced from the source zone immediately below said one surface, a third zone, of said first impurity type in said substrate extending between said source and drain zones and extending deeper in said substrate than either said source or drain zones, a thin buried zone of the second conductivity type in said substrate spaced below and around the ends of said source zone, the region of said buried zone where it lies between said source and drain zones providing a channel whose length is only the thickness of the buried zone in the region where the buried zone reaches the substrate surface. A process for producing such a transistor is also disclosed.
REFERENCES:
patent: 3436620 (1969-04-01), Diemer et al.
patent: 3604990 (1971-09-01), Sigsbee
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3846822 (1974-11-01), Riley et al.
patent: 3950777 (1976-04-01), Tarui et al.
patent: 4115794 (1978-09-01), De La Moneda
patent: 4143388 (1979-03-01), Esaki et al.
J. Verwey et al., "Atmos-An Elect. Reprogram. Read-Only Mem. Dev., " IEEE Trans. On Elec. Dev., vol. Ed-21, #10, Oct. 1974, pp. 631-635.
Bell Guido
Tihanyi Jenoe
Clawson Jr. Joseph E.
Siemens Aktiengesellschaft
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