Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-08-16
2011-08-16
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S108000, C257SE29252
Reexamination Certificate
active
07999286
ABSTRACT:
The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer.
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Ohta Hiroaki
Takasu Hidemi
Dickey Thomas L
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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