MIS FET semiconductor device with improved leakage current

Details MIS FET semiconductor device with improved leakage current MIS FET semiconductor device with improved leakage current

1986-06-06

1988-11-15

Larkins, William D.

357 52, 357 231, 357 238, 357 2311, 357 2314, H01L 2978, H01L 2940

Patent

active

047853433

ABSTRACT:
The present invention relates to a MIS FET having an additional gate electrode (referred to as a suppression gate electrode) which extends along a boundary region between a MIS FET active region and a field oxide film under a drain wiring. When the drain wiring is supplied with a voltage high enough to induce an inversion layer of the same polarity as the MIS FET channel, a parasitic transistor is formed in parallel with the MIS FET and creates an increase in leakage current. A suppression gate electrode of the present invention forms an interrupting transistor connected in series with the parasitic transistor and therefore cuts off the leakage current.

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