Fishing – trapping – and vermin destroying
Patent
1991-07-30
1995-02-28
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437184, 437235, 437241, 437946, H01L 21285, H01L 21336, H01L 21306
Patent
active
053936809
ABSTRACT:
There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed.
REFERENCES:
patent: 4320178 (1982-03-01), Chemla et al.
patent: 4751200 (1988-06-01), Gmitter et al.
patent: 4751201 (1988-06-01), Nottenburg et al.
patent: 4871692 (1989-10-01), Lee et al.
patent: 4920078 (1990-04-01), Bagley et al.
Shikata et al., "Formation of Submicron Silicon-Nitride Patterns by Lift-Off Method Using ECR-CVD", SPIE vol. 797 Advanced Processing of Semiconductor Devices, 1987, pp. 126-129.
Iyer et al., "Role of Polysulfides in the Passivation of the InP Surface", Appl. Phys. Lett., vol. 59, No. 4, 22 Jul. 1991, pp. 437-439.
Matsuo et al., "Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma," Jap. J. of Appl. Physics, vol. 22, No. 4, Apr. 1983, pp. L210-L212.
Shikata et al., "Photoluminescence Studies on Over-Passivations of (NH.sub.4).sub.2 S.sub.x -treated GaAs," J. Appl. Phys., vol. 70, No. 7, Oct. 1, 1991, pp. 3721-3725.
Weiguo, "Interface of Anodic Sulfide-Oxide on n-type InSb", Appl. Phys. A, vol. 52, 1991, pp. 75-77.
Neudeck et al, "Significant Long-Term Reduction in n-channel MESFET Subthreshold Leakage Using Ammonium-Sulfide Surface Treated Gates," IEEE Electron Device Letters, Oct. 1991, vol. 12, No. 12, pp. 553-555.
Sandroff, "Chemical Passivation of Compound Semiconductor Surfaces: Applications, Mechanisms and In Situ Probes", Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, p. 273.
Iyer et al., "Preparation and Characterization of Polysulfide Treated InP MIS Structures," Third Int'l. Conf. Indium Phosphide and Related Materials, IEEE, 1991, pp. 621-625.
Lau et al., "In Situ X-ray Photoelectron Spectroscopic Study of Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride on Sulfur Passivated InP", J. Vac. Sci. Technol. B, vol. 8, No. 4 Jul./Aug. 1990, pp. 848-855.
Sumitomo Electric Industries Ltd.
Wilczewski Mary
LandOfFree
MIS electrode forming process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MIS electrode forming process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS electrode forming process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-848018