MIS Device having a metal and insulating layer containing at lea

Details MIS Device having a metal and insulating layer containing at lea MIS Device having a metal and insulating layer containing at lea

1979-03-23

1981-05-26

James, Andrew J.

357 52, 357 67, 357 65, 357 68, H01L 2978, H01L 2934, H01L 2348

Patent

active

042701368

ABSTRACT:
A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.

REFERENCES:
patent: 3402081 (1968-09-01), Lehman
patent: 3617824 (1971-11-01), Shinoda
patent: 3717798 (1973-02-01), Kahn
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4015175 (1977-03-01), Kendall et al.
patent: 4109372 (1978-08-01), Geffken

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