Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-04-19
2005-04-19
Leung, Quyen (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S096000
Reexamination Certificate
active
06882673
ABSTRACT:
An exemplary embodiment of the present invention integrates an absorbing layer into the emitting mirror of a VCSEL to reduce the reflectivity of the emitting mirror as seen by the feedback optical wave. The absorbing layer may be made of a suitable semiconductor material, such as a GaAs layer in a laser emitting near 850 nm or highly doped p-layer, and may disposed epitaxially in a semiconductor or metamorphic mirror. Alternatively, a metal layer may be disposed in the dielectric portion of a hybrid mirror or all-dielectric mirror.
REFERENCES:
patent: 5574738 (1996-11-01), Morgan
Scott Jeffrey W.
Wasserbauer John
Barlow Josephs & Holmes, Ltd.
Leung Quyen
Optical Communication Products, Inc.
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